Quantum Device Group

Our group measures the electronic properties of nanometer- and micron-scale devices at temperatures from 0.01K to 1K, where electronic transport is dominated by quantum mechanical effects. Many of our experiments focus on electron spin, because spin is the quantum degree of freedom that is most resilient to environmental decoherence. Specific projects currently underway include spin current control and measurement in GaAs circuits, decoherence and Kondo interactions in quantum dots, and graphene nanoelectronics.